NX3P1107 Reference Design Circuit | Power Switch Application Circuit

The NX3P1107 power switch integrates reverse current/voltage protection, overvoltage protection, overcurrent protection and overtemperature protection. When a system failure is detected, the switch itself is actively protected and the components that receive it are actively protected. This article mainly introduces the NX3P1107 features, application range, reference design circuit and circuit analysis to help you shorten the design time.

NX3P1107 features: low on-resistance for maximum efficiency; inrush current control; overvoltage withstand input up to 30V; overvoltage, overcurrent, overtemperature protection; integrated 8kV IEC6100-4-2 (contact) ESD diode.

NX3P1107 Typical Applications: Mobile Computing, Smartphones, Digital Cameras, Portable Medical Devices

NX3P1107 reference design application circuit:

Figure 1 NX3P1107 internal structure block diagram

The NX3P1107 is a high-side load switch which features a low ON resistance P-channel MOSFET that supports more than 1.5 A of continuous current. Designed for operation from 0.9 V to 3.6 V, it is used in power domain isolation applications to reduce power The enable logic includes integrated logic level translation making the device compatible with lower voltage processors and controllers..

Figure 2 NX3P1107 reference design

The NX3P1107 is ideal for portable, Battery operated applications due to low ground current and ultra-low OFF-state current.

NX3P1107 Chinese data sheet: Click to download

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