Joint development work hopes to yield large-area GaN wafers for improved growth of devices including LEDs.
Aonex, a subsidiary of Arrowhead Research Corporation, will provide Kyma with access to its proprietary wafer technology, A-Sapph?. Kyma will work to leverage the superior properties of A-Sapph to produce large-area wafers suitable for the manufacture of GaN devices .
Aonex and Kyma believe that large-area wafers could dramatically reduce the cost of GaN devices by enabling an increase in the number of chips per wafer while also substantially improving yields.
Keith Evans, Kymas president and CEO, said: The combined attributes of Aonex's A-Sapph substrate technology and Kymas proprietary high-growth-rate, low defect density GaN crystal growth technology have great potential to reduce the costs of a broad range of high performance Nitride semiconductor devices.
Evans told LEDs Magazine that after the initial collaborative investigation there are several different potential routes to market. Certainly there is potential to offer both c-plane and non-polar Kyma GaN on Aonex sapphire-on-poly-AlN. But there are otherpossibilities also In the area of ​​bulk GaN growth, which we are not saying much about publicly.
A-Sapph substrates are comprised of an ultra-thin layer of single crystal sapphire (
Aonex, a subsidiary of Arrowhead Research Corporation, will provide Kyma with access to its proprietary wafer technology, A-Sapph?. Kyma will work to leverage the superior properties of A-Sapph to produce large-area wafers suitable for the manufacture of GaN devices .
Aonex and Kyma believe that large-area wafers could dramatically reduce the cost of GaN devices by enabling an increase in the number of chips per wafer while also substantially improving yields.
Keith Evans, Kymas president and CEO, said: The combined attributes of Aonex's A-Sapph substrate technology and Kymas proprietary high-growth-rate, low defect density GaN crystal growth technology have great potential to reduce the costs of a broad range of high performance Nitride semiconductor devices.
Evans told LEDs Magazine that after the initial collaborative investigation there are several different potential routes to market. Certainly there is potential to offer both c-plane and non-polar Kyma GaN on Aonex sapphire-on-poly-AlN. But there are otherpossibilities also In the area of ​​bulk GaN growth, which we are not saying much about publicly.
A-Sapph substrates are comprised of an ultra-thin layer of single crystal sapphire (
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