Recently, China Electronic Information Industry Group Co., Ltd. Shenzhen Great Wall Development Technology Co., Ltd. (referred to as Great Wall Development) and Taiwan Jingyuan Optoelectronics Co., Ltd., Yiguanjing (Fujian) Optoelectronics Co., Ltd. jointly invested in the development and manufacture of LED upstream epitaxial wafers Project ——— “Developing Jing†LED project, after more than one year of project negotiation and negotiation, officially held the signing ceremony.
It is reported that the total planned investment of the project is 490 million US dollars. After completion, it can form an annual production capacity of 720,000 high-brightness GaN blue epitaxial wafers, 4.6 billion backlight chips and 390 million lighting chips. Within 3 to 5 years, it will be built into a domestic first-class LED industry base with strong international competitiveness, covering upstream LED epitaxial wafers, chips, LED packaging and light source applications.
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