On October 31, 2017, under the guidance of Shenzhen Science and Technology Association, the “Sino-European Third-generation Semiconductor Summit Forum†co-sponsored by Southern Science and Technology University, Shenzhen Pingshan District People's Government and Shenzhen Bronze Sword Technology Co., Ltd. successfully succeeded in Shenzhen Wuzhou Hotel. Held. The event invited more than 200 experts, scholars and industry professionals from China and Europe to engage in third-generation semiconductor technologies such as silicon carbide and gallium nitride, which is a heavyweight event in the industry.
CEIBS Third Generation Semiconductor Summit Forum
The forum was hosted by Shenzhen Basic Semiconductor Co., Ltd., Shenzhen Third Generation Semiconductor Device Key Laboratory, Shenzhen China-Europe Innovation Center, and was awarded by Shenzhen Tsinghua University Research Institute, Lihe Science & Technology Group, Shenzhen 1000 People Experts Association, Shenzhen Fangzhengwei Electronics Co., Ltd. strongly supports.
Jiang Yuyang, deputy director of the Standing Committee of the Shenzhen Municipal People's Congress and chairman of the Shenzhen Science and Technology Association, attended and gave a welcome speech. He introduced the outstanding achievements of Shenzhen's scientific and technological development and the support for the third-generation semiconductor industry. He hoped that the majority of technology companies and science and technology workers will seize the times. Pulse, further increase investment in research and development, strengthen international cooperation, and help the rapid development of the third-generation semiconductor industry. Tang Tao, Vice President of Southern University of Science and Technology, and Magnus Breidne, Vice President of the Royal Swedish Academy of Engineering, also delivered speeches.
Speech by Jiang Yuyang, deputy director of the Standing Committee of Shenzhen Municipal People's Congress and chairman of Shenzhen Science and Technology Association
Mikael Östling, Executive Vice President of the Royal Institute of Technology, Peter Björkholm, Director of the Institute of Communication and Microelectronics, Swedish National Research Institute, Patrick Palmer, Professor of the University of Cambridge, and Yu Hongyu, Professor of Southern University of Science and Technology, and other experts and scholars The design, process and application of silicon and GaN devices are introduced in depth, and the market opportunities and future development trends of the third-generation semiconductor industry are discussed. Dr. Zhang Zhenzhong, deputy general manager of Shenzhen Basic Semiconductor Co., Ltd. introduced the development and application of global silicon carbide power devices, and the fully epitaxial trench JBS diodes realized by independent research and development of new technology. All the indicators have reached the international advanced level. .
Speech by Magnus Breidne, Associate Dean of the Royal Swedish Academy of Engineering
In recent years, third-generation semiconductor materials represented by wide band gap compounds such as silicon carbide and gallium nitride have attracted worldwide attention. Because of its advantages of forbidden bandwidth, high breakdown electric field strength, high saturation electron mobility, high thermal conductivity, small dielectric constant, and strong radiation resistance, it can be widely used in new energy vehicles, rail transit, smart grid, semiconductors. Lighting, next-generation mobile communications, consumer electronics and other fields are regarded as the core technologies supporting the development of energy, transportation, information, defense and other industries. The global market capacity will reach 10 billion US dollars in the future and has become the semiconductor industry in the United States, Europe and Japan. One of the key research directions.
On May 8, 2015, the third generation of semiconductor power devices represented by silicon carbide and gallium nitride was mentioned in the “Made in China 2025†issued by the State Council. It can be seen that the third-generation semiconductor industry is important in the development of the national economy. status. At present, China has been keeping up with the world's forefront in the research of third-generation semiconductor materials. It is one of the few countries in the world that has a silicon carbide substrate and material extension industrialization. In the third generation of semiconductor device design and manufacturing process is also moving to the world's advanced level.
Bronze Sword Technology Vice President, General Semiconductor General Manager and Dr. Qi held the meeting
The China-Europe Third-generation Semiconductor Summit Forum came to an end in a warm atmosphere, and participants in the industry were full of confidence in the development of China's third-generation semiconductor. Bronze Sword Technology Vice President, General Semiconductor General Manager and Dr. Yan said that China's third-generation semiconductor industry has already ushered in the spring of development. By integrating innovative technologies, talents and domestic industrial resources at home and abroad, Basic Semiconductor has comprehensively mastered various technologies such as material preparation, chip design, manufacturing process, package testing and drive application of silicon carbide devices. Under the background of national policy support and enterprise innovation, basic semiconductor has become one of the fastest growing silicon carbide power device companies in China.
The successful convening of the summit forum has established a platform for international exchanges between China, Sweden, the United Kingdom and other well-known institutions, research institutions and innovative enterprises. It will further promote academic exchanges and scientific research cooperation and establish long-term partnerships. Promote the rapid development of China's third-generation semiconductor industry.
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